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IRF7433PBF - Power MOSFET

General Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

Key Features

  • n be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription for IRF7433PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7433PBF. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PD - 95305 IRF7433PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS -1...

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hannel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max 24mΩ@VGS = -4.5V 30mΩ@VGS = -2.5V 46mΩ@VGS = -1.8V ID -8.7A -7.4A -6.3A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

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