IRF7465PBF Key Features
- Lead-Free
- IRF7465PbF HEXFET® Power MOSFET RDS(on) max 0.28W@VGS = 10V ID 1.9A VDSS 150V Benefits Low Gate to Drain Cha
- Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current