IRF7463 Datasheet | International Rectifier

PD- 93843A SMPS MOSFET HEXFET® Power MOSFET l Applications High Frequency DC-DC Converters with Synchronous Rectification VDSS 30V RDS(on) max 0.008Ω 14A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 14 11 110 2.5 1.6 0.02 ± 12 -55 to + 150 Units A W W/°C V Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient† Max. Units °C/W Typical SMPS Topologies l Tele 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes  through † are on page 7 .irf. 3/30/00 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units 30 - - - - - - V - - - 0.029 -...