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PD- 93843A
SMPS MOSFET
IRF7463
HEXFET® Power MOSFET
l
Applications High Frequency DC-DC Converters with Synchronous Rectification
VDSS
30V
RDS(on) max
0.008Ω
ID
14A
Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current
l
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
14 11 110 2.5 1.6 0.02 ± 12 -55 to + 150
Units
A W W/°C V
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.