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IRF7464 - Power MOSFET

Datasheet Summary

Features

  • while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 94mH RG = 25Ω, IAS = 1.2A.
  • ISD ≤ 0.72A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C † When mounted on 1 inch square copper board, t.

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PD- 93895 SMPS MOSFET Applications l High frequency DC-DC converters IRF7464 HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.73Ω ID 1.2A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
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