IRF7464 Description
PD- 93895 SMPS MOSFET Applications l High frequency DC-DC converters IRF7464 HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.73Ω ID 1.2A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 1 4/25/00 IRF7464 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown...
IRF7464 Key Features
- High frequency DC-DC converters IRF7464 HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.73Ω ID 1.2A Benefits
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current