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IRF7464PBF - HEXET Power MOSFET

Key Features

  • VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 94mH RG = 25Ω, IAS = 1.2A.
  • ISD ≤ 0.72A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C † When mounted on 1 inch square copper board, t.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7464 Power MOSFET
IRF7460 Power MOSFET
IRF7460PBF HEXFET Power MOSFET
IRF7463 Power MOSFET
IRF7463PBF HEXFET Power MOSFET
IRF7465 Power MOSFET
IRF7465PBF High frequency DC-DC converters
IRF7466 Power MOSFET
IRF7466PbF SMPS MOSFET
IRF7467 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95273 SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRF7464PbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.73Ω ID 1.2A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 www.DataSheet4U.