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IRF7555PBF - Power MOSFET

General Description

New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • in millimeters (inches).

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Full PDF Text Transcription for IRF7555PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7555PBF. For precise diagrams, and layout, please refer to the original PDF.

PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l L...

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all SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 Top View VDSS = -20V RDS(on) = 0.055Ω The new Micro8™ package has half the footprint area of the standar

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