IRF7555PBF
IRF7555PBF is Power MOSFET manufactured by International Rectifier.
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
1 8 D1 2 7 D1 3 6 D2 4 5 D2
Top View
VDSS = -20V RDS(on) = 0.055Ω
The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8™
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation- Maximum Power Dissipation- Linear Derating Factor
VGS EAS dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy- Peak Diode Recovery dv/dt
TJ , TSTG
Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
- .irf.
Max. -20 -4.3 -3.4 -34 1.25 0.8 10
± 12 36 1.1 -55 to + 150 240 (1.6mm from case)
Units V
W W m W/°C
V m J V/ns °C
Units 100
°C/W
2/22/05
IRF7555Pb F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown...
