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International Rectifier Electronic Components Datasheet

IRF7555PBF Datasheet

Power MOSFET

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PD -95993
IRF7555PbF
l Trench Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Lead-Free
S1
G1
S2
G2
Description
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
HEXFET® Power MOSFET
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
VDSS = -20V
RDS(on) = 0.055
The new Micro8package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Peak Diode Recovery dv/dt ‚
TJ , TSTG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient „
www.irf.com
Max.
-20
-4.3
-3.4
-34
1.25
0.8
10
± 12
36
1.1
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
mJ
V/ns
°C
Units
100
°C/W
1
2/22/05


International Rectifier Electronic Components Datasheet

IRF7555PBF Datasheet

Power MOSFET

No Preview Available !

IRF7555PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– -0.005 ––– V/°C
––– ––– 0.055
––– ––– 0.105
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.3A ƒ
VGS = -2.5V, ID = -3.4A ƒ
VGS(th)
Gate Threshold Voltage
-0.60 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
2.5 ––– ––– S VDS = -10V, ID = -0.8A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg Total Gate Charge
––– 10 15
ID = -3.0A
Qgs Gate-to-Source Charge
––– 2.1 3.1 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge
––– 2.5 3.7
VGS = -5.0V
td(on)
Turn-On Delay Time
––– 10 –––
VDD = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 46 ––– ns ID = -2.0A
––– 60 –––
RG = 6.0
––– 64 –––
RD = 5.0ƒ
Ciss Input Capacitance
––– 1066 –––
VGS = 0V
Coss
Output Capacitance
––– 402 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance
––– 126 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.3
––– -34
––– -1.2
54 82
41 61
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.6A, VGS = 0V ƒ
TJ = 25°C, IF = -2.5A
di/dt = -100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD -2.0A, di/dt -140A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
2
„ Surface mounted on FR-4 board, t 10sec.
… Starting TJ = 25°C, L = 8.0mH
RG = 25, IAS = -3.0A.
www.irf.com


Part Number IRF7555PBF
Description Power MOSFET
Maker International Rectifier
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IRF7555PBF Datasheet PDF






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