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IRF7501PBF - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • K P = DES IGNAT ES LEAD - FREE.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7501 Power MOSFET
IRF7503 Power MOSFET
IRF7503PBF Power MOSFET
IRF7504 Power MOSFET
IRF7504PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95345A IRF7501PbF HEXFET® Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS =20V RDS(on) = 0.135Ω 6 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.