Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- ons are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )
F E E D D I R E C T IO N
N O TE S : 1 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -5 4 1. 2 . C O N TR O LL IN G D IM E N S IO N : M IL L IM E TE R . 3 30 . 00 ( 12 . 99 2 ) MA X. 1 4. 4 0 ( . 56 6 ) 1 2. 4 0 ( . 48 8 ) NO T E S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E I A -48 1 & E IA -5 4 1.
IRF7504 Datasheet
