Datasheet Details
| Part number | IRF7737L2TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 267.53 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF7737L2TRPBF Datasheet
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General Description
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.
Key Features
- of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current.