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IRF7737L2TR1PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96414 IRF7737L2TRPbF IRF7737L2TR1PbF • Advanced Process Technology • Optimized for Industrial Motor Drive, DC-DC and • • • • • other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free D DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.5mΩ max. 1.

Download the IRF7737L2TR1PBF datasheet PDF. This datasheet also includes the IRF7737L2TRPBF variant, as both parts are published together in a single manufacturer document.

General Description

The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current.