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International Rectifier Electronic Components Datasheet

IRF7752 Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
VDSS
30V
PD -94030A
IRF7752
HEXFET® Power MOSFET
RDS(on) max
0.030@VGS = 10V
0.036@VGS = 4.5V
ID
4.6A
3.9A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
Max.
30
±4.6
±3.7
±37
1.0
0.64
8.0
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
3/25/01


International Rectifier Electronic Components Datasheet

IRF7752 Datasheet

Power MOSFET

No Preview Available !

IRF7752
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.030 –––
––– ––– 0.030
––– ––– 0.036
V/°C
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.6A ‚
VGS = 4.5V, ID = 3.9A ‚
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
0.60 ––– 2.0
12 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 4.6A
IDSS Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -200 nA VGS = -12V
––– ––– 200
VGS = 12V
Qg Total Gate Charge
––– 9.0 –––
ID = 4.6A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– 2.5 ––– nC VDS = 24V
––– 2.6 –––
VGS = 4.5V‚
td(on)
Turn-On Delay Time
––– 7.2 –––
VDD = 15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 9.1 ––– ns ID = 1.0A
––– 25 –––
RG = 6.0
––– 11 –––
VGS = 10V‚
Ciss Input Capacitance
––– 861 –––
VGS = 0V
Coss Output Capacitance
––– 210 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 25 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
23
Max. Units
0.91
37
A
1.3 V
––– ns
––– nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.91A, VGS = 0V ‚
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com


Part Number IRF7752
Description Power MOSFET
Maker International Rectifier
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IRF7752 Datasheet PDF






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