IRF7752
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.030 –––
––– ––– 0.030
––– ––– 0.036
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.6A
VGS = 4.5V, ID = 3.9A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
0.60 ––– 2.0
12 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 4.6A
IDSS Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -200 nA VGS = -12V
––– ––– 200
VGS = 12V
Qg Total Gate Charge
––– 9.0 –––
ID = 4.6A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– 2.5 ––– nC VDS = 24V
––– 2.6 –––
VGS = 4.5V
td(on)
Turn-On Delay Time
––– 7.2 –––
VDD = 15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 9.1 ––– ns ID = 1.0A
––– 25 –––
RG = 6.0Ω
––– 11 –––
VGS = 10V
Ciss Input Capacitance
––– 861 –––
VGS = 0V
Coss Output Capacitance
––– 210 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 25 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
25
23
Max. Units
0.91
37
A
1.3 V
––– ns
––– nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.91A, VGS = 0V
TJ = 25°C, IF = 0.91A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com
