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International Rectifier Electronic Components Datasheet

IRF7754GPBF Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the ruggedized device design, that International Rectifier
is well known for, provides thedesigner with an extremely
efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the
standard SO-8. This makes the TSSOP-8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.2mm) allows it to fit easily into extremely
thin environments such as portable electronics and PCMCIA
cards.
PD- 96152A
IRF7754GPbF
HEXFET® Power MOSFET
VDSS
-12V
RDS(on) max
25m@VGS = -4.5V
34m@VGS = -2.5V
49m@VGS = -1.8V
ID
-5.4A
-4.6A
-3.9A
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-5.5
-4.4
-22
1
0.64
0.01
±8
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
125
Units
°C/W
1
05/14/09
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International Rectifier Electronic Components Datasheet

IRF7754GPBF Datasheet

Power MOSFET

No Preview Available !

IRF7754GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 ––– –––
––– 0.008 –––
––– ––– 25
––– ––– 34
––– ––– 49
-0.4 ––– -0.9
16 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 22 –––
––– 3.9 –––
––– 4.8 –––
––– 9.8 14.7
––– 18 27
––– 267 401
––– 191 287
––– 1984 –––
––– 618 –––
––– 385 –––
V
V/°C
m
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -5.4A ‚
VGS = -2.5V, ID = -4.6A ‚
VGS = -1.8V, ID = -3.9A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.4A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS = 8V
ID = -5.4A
VDS = -6V
VGS = -4.5V ‚
VDD = -6V, VGS = -4.5V
ID = -1.0A
RD = 6
RG = 6‚
VGS = 0V
VDS = -6V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
39
27
Max.
-1.0
-22
-1.2
59
41
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
2 www.irf.com
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Part Number IRF7754GPBF
Description Power MOSFET
Maker International Rectifier
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