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PD - 94224
IRF7754
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-12V
RDS(on) max
25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V 49mΩ@VGS = -1.8V
ID
-5.4A -4.6A -3.9A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
IRF7754 Datasheet
