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PD - 94174
IRF7757
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration
VDSS
20V
RDS(on) max (mΩ)
35@VGS = 4.5V 40@VGS = 2.5V
ID
4.8A 3.8A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de-
1 2 3 4 1= 2= 3= 4= S1 G1 S2 G2 8= 7= 6= 5= D D D D
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signer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
IRF7757 Datasheet
