IRF7757PbF Datasheet | International Rectifier

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. VDSS 20V PD-96018 IRF7757Pb F HEXFET® Power MOSFET RDS(on) max (m W) 35@VGS = 4.5V 40@VGS = 2.5V 4.8A 3.8A 1 2 3 4 1 = S1 2 = G1 3 = S2 4 = G2 8 7 6 5 8= D 7= D 6= D 5= D TSSOP-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation - Power Dissipation- Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.8 3.9 19 1.2 0.76 9.5 ± 12 -55 to + 150 Units V W m W/°C V °C Thermal Resistance RθJA .irf. Parameter Maximum Junction-to-Ambient- Max. 105 Units...