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IRF7757GPBF - Power MOSFET

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' !

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Features

  • ation Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription

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PD- 96154A IRF7757GPbF l l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max (mW) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # Ã2ÃT !Ã2ÃB "Ã2ÃT! #Ã2ÃB! 'Ã2Ã9 &Ã2Ã9 %Ã2Ã9 $Ã2Ã9 & % $ signer with an extremely efficient and reliable device for battery and load management.
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