Datasheet4U Logo Datasheet4U.com

IRF7754GPBF - Power MOSFET

Datasheet Summary

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

' !

Features

  • ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

📥 Download Datasheet

Datasheet preview – IRF7754GPBF

📁 Similar Datasheet

  • IRF7704TRPBF - Dual P-Channel MOSFET (VBsemi)
  • IRF7769L1 - Power MOSFET (Infineon)
  • IRF7769L1TRPbF - Power MOSFET (Infineon)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 96152A IRF7754GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V 49mΩ@VGS = -1.8V ID -5.4A -4.6A -3.9A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely ' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! efficient and reliable device for management.
Published: |