Datasheet Details
| Part number | IRF7769L1TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 276.76 KB |
| Description | Power MOSFETs |
| Datasheet |
 IRF7769L1TRPBF Datasheet
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General Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Key Features
- 13 IRF7769L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C 10 TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) 10000 1000.