IRF7769L1TRPBF - Power MOSFETs

Product Overview

International Rectifier

Datasheet Details

Part number	IRF7769L1TRPBF
Manufacturer	International Rectifier
File Size	276.76 KB
Description	Power MOSFETs
Datasheet	IRF7769L1TRPBF Datasheet
Additional preview pages of the IRF7769L1TRPBF datasheet.

Product details

Description

The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

13 IRF7769L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C 10 TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) 10000 1000.

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Published: Oct 13, 2015 |