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IRF7805PbF Datasheet HEXFET Chip-Set for DC-DC Converters

Manufacturer: International Rectifier (now Infineon)

General Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters.

Overview

PD – 96031A IRF7805PbF HEXFET® Chip-Set for DC-DC Converters • N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses •.

Key Features

  • VDS RDS(on) Qg Qsw Qoss IRF7805PbF 30V 11mΩ 31nC 11.5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed Drain Current ePower Dissipation ePower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead egRθJA.