Kexin Electronics IRF7805Z
N-Channel Enhancement MOSFET
| Part No. | IRF7805Z |
|---|---|
| Datasheet | IRF7805Z Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 30V● ID = 16 A (VGS = 10V)
● RDS(ON) ＜ 6.8mΩ (VGS = 10V)
● HEXFET Power MOSFET S 1 S 2 S 3 G 4 SOP-8 +0.04 0.21 -0.02 AA 8 D 7 D 6 D 5 D 1.50 0.15
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDS VGS ID IDM IAR EAS PD RthJA RthJC TJ Tstg Rating 30 ±20 16 12 120 12 72 2.5 1.6 50 20 150 -55 to 150 Unit V A mJ W ℃/W ℃ 1 SMD Type N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) MOSFET●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacita...
