International Rectifier IRF7805Z
Power MOSFET
| Part No. | IRF7805Z |
|---|---|
| Datasheet | IRF7805Z Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Point-of-Load Synchronous Buck Converter forAPPLICATIONS
in Networking & Computing Systems. l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% tested for Rg PD - 96011A IRF7805ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) : 30V 6.8m @VGS = 10V 18nC S 1 S 2 S 3 G 4 AA 8 D 7 D 6 D 5 D Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current f Power Dissipation f Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Parameter Junction-to-Drain Lead fg Junction-to-Ambient Max. 30 ± 20 16 12 120 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 20 50 Units °C/W Notes through are on page 10 1 06/30/05 IRF7805ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
