IRF7832ZPBF
..
- 96013A
IRF7832ZPb F
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free l 100% tested for Rg
VDSS
30V
3.8m:@VGS = 10V
A A D D D D
RDS(on) max
Qg
30n C
1 2 3 4
8 7
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 21 17 160 2.5 1.6 0.02 -55 to + 150
Units
V c
A W W/°C °C
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RθJL RθJA g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
- -
- -
- -...
