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International Rectifier Electronic Components Datasheet

IRF7832ZPBF Datasheet

HEXFET Power MOSFET

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PD - 96013A
IRF7832ZPbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
VDSS
30V
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
l 100% tested for Rg
S
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.8m @VGS = 10V 30nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 10
www.irf.com
Max.
30
± 20
21
17
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
06/30/05


International Rectifier Electronic Components Datasheet

IRF7832ZPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF7832ZPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
Typ.
–––
0.023
3.1
––– 3.7
V GS(th )
V GS(th )
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
-5.5
–––
––– –––
IGSS
Gate-to-Source Forward Leakage
––– –––
Gate-to-Source Reverse Leakage
––– –––
gfs Forward Transconductance
80 –––
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 30
––– 7.9
––– 2.6
––– 11
––– 8.5
––– 13.6
––– 19
––– 1.2
––– 14
––– 15
––– 18
––– 5.6
––– 3860
––– 840
––– 370
Max. Units
Conditions
–––
–––
3.8
4.5
2.35
–––
V VGS = 0V, ID = 250µA
V/°C
m
Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
–––
45
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 16A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 16A
––– See Fig. 16
–––
––– nC VDS = 16V, VGS = 0V
1.9
––– VDD = 15V, VGS = 4.5V
––– ID = 16A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
350
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 160
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 16A, VGS = 0V
e––– 16 24 ns TJ = 25°C, IF = 16A, VDD = 15V
––– 29 44 nC di/dt = 500A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRF7832ZPBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRF7832ZPBF Datasheet PDF






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International Rectifier





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