Datasheet4U Logo Datasheet4U.com

IRF7831 - HEXFET Power MOSFET

Key Features

  • h generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, res.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF7832 N-Channel 30-V (D-S) MOSFET Freescale
IRF7805PBF Power MOSFET Infineon
IRF7805TRPbF-1 Power MOSFET Infineon
IRF7805Z N-Channel Enhancement MOSFET Kexin
IRF7855 N-Channel MOSFET Kexin

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7831PBF Power MOSFET
IRF7832 HEXFET Power MOSFET
IRF7832PBF HEXFET Power MOSFET
IRF7832PBF-1 Power MOSFET
IRF7832Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94636 IRF7831 HEXFET® Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max 30V 3.6m @VGS = 10V : Qg (typ.) 40nC S S S G 1 8 7 A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 12 21 17 170 2.5 1.6 0.