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International Rectifier Electronic Components Datasheet

IRF7862PBF Datasheet

Power MOSFET

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PD - 97275
IRF7862PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
VDSS
30V
S
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.7m @VGS = 10V 30nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Max.
30
± 20
21
17
170
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
3/1/07


International Rectifier Electronic Components Datasheet

IRF7862PBF Datasheet

Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRF7862PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
30
–––
–––
–––
1.35
–––
–––
–––
0.023
3.0
3.7
–––
-5.4
–––
–––
–––
3.7
4.5
2.35
–––
1.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
V VDS = VGS, ID = 100µA
mV/°C VDS = VGS, ID = 250µA
µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
87 ––– –––
––– 30 45
S VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 7.5 –––
VDS = 15V
––– 3.1 ––– nC VGS = 4.5V
––– 9.8 –––
ID = 16A
––– 9.6 –––
See Figs. 15 & 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 12.9 –––
Qoss
Output Charge
Rg Gate Resistance
––– 18 ––– nC VDS = 16V, VGS = 0V
––– 1.0 1.6
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 12 –––
VDD = 15V, VGS = 4.5V
––– 16 –––
ID = 16A
––– 17 ––– ns Clamped Inductive Load
tf Fall Time
––– 6.1 –––
Ciss Input Capacitance
––– 4090 –––
VGS = 0V
Coss Output Capacitance
––– 810 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 390 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
350
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 170
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 16A, VGS = 0V
e––– 17 26 ns TJ = 25°C, IF = 16A, VDD = 15V
––– 33 50 nC di/dt = 430A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRF7862PBF
Description Power MOSFET
Maker International Rectifier
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IRF7862PBF Datasheet PDF






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