Datasheet Details
| Part number | IRF7805PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 222.38 KB |
| Description | HEXFET Chip-Set for DC-DC Converters |
| Datasheet |
 IRF7805PbF Datasheet
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General Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
Key Features
- VDS RDS(on) Qg Qsw Qoss IRF7805PbF 30V 11mΩ 31nC 11.5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed Drain Current ePower Dissipation ePower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead egRθJA.