0 TJ = 25°C VDS = 15V ≤ 60µs PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 6.0 0.1 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. .

l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Bene.

ature (°C) Starting TJ, Junction Temperature (°C) Fig 23. Maximum Avalanche Energy vs. Drain Current.

IRF7901D1

IRF7901D1PBF

IRF7902PBF

IRF7904PBF

IRF7904PBF-1

IRF7904UPBF

IRF7907PBF

IRF7907TRPBF-1

IRF7910

IRF7910PBF

IRF7910PBF-1

IRF7946PBF

IRF7946TRPbF