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International Rectifier Electronic Components Datasheet

IRF7946TRPbF Datasheet

Power MOSFET

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Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant Containing no Lead, no Bromide
and no Halogen
StrongIRFET™
IRF7946PbF
DirectFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.1mΩ
1.4mΩ
c198A
90A
G
D
S
D
S
MX
DirectFET™ ISOMETRIC
Base part number
IRF7946TRPbF
Package Type
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Complete Part Number
IRF7946TRPbF
6.0 200
ID = 90A
Limited By Package
150
4.0
TJ = 125°C
2.0
100
50
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
November 25, 2014


International Rectifier Electronic Components Datasheet

IRF7946TRPbF Datasheet

Power MOSFET

No Preview Available !

IRF7946PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
Thermal Resistance
Symbol
RθJA
RθJA
RθJA
RθJC
RθJA-PCB
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
eSingle Pulse Avalanche Energy
lSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Parameter
nJunction-to-Ambient
pJunction-to-Ambient
oJunction-to-Ambient
qkJunction-to-Case
Junction-to-PCB Mounted
Max.
198™
125™
793
96
0.77
± 20
-55 to + 150
85
200
See Fig. 14, 15, 22a, 22b
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.3
–––
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.03
1.1
1.7
3.0
–––
–––
–––
–––
0.67
Max.
–––
–––
1.4
–––
3.9
1.0
150
100
-100
–––
Units
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
Conditions
VGS = 0V, ID = 250μA
dReference to 25°C, ID = 1.0mA
gVGS = 10V, ID = 90A
gVGS = 6.0V, ID = 72A
VDS = VGS, ID = 150μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Notes:
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Ž Used double sided cooling , mounting pad with large heatsink.
 TC measured with thermocouple mounted to top (Drain) of part.
ΠSurface mounted on 1 in. square Cu
(still air).
 Mounted to a PCB with
small clip heatsink (still air)
 Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 25, 2014


Part Number IRF7946TRPbF
Description Power MOSFET
Maker International Rectifier
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IRF7946TRPbF Datasheet PDF






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