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IRF9204PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96277B.

General Description

This HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free.

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