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IRF9383M - Power MOSFET

Download the IRF9383M datasheet PDF. This datasheet also covers the IRF9383MPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IRF9383MPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter.

Key Features

  • l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) DirectFET® P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V G D S S D MX DirectFET™.