IRF9389PBF
IRF9389PBF is HEXFET Power MOSFET manufactured by International Rectifier.
N-CH 30 27 6.8 6.8 P-CH -30 64 8.1 -4.6
HEXFET® Power MOSFET
V m nC A
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
V DS R DS(on) max Qg (typical) ID
(@TA = 25°C)
D1 D1 D2 D2
3 4
6 5
P-CHANNEL MOSFET
Top View
SO-8
Applications l High and Low Side Switches for Inverter l High and Low Side Switches for Generic Half-Bridge
Features
Benefits High and low-side MOSFETs in a single package Increased power density High-side P-Channel MOSFET Easier drive circuitry Industry-standard pinout results in Multi-vendor patibility patible with existing surface mount techniques Easier manufacturing RoHS pliant containing no Lead, no Bromide and no Halogen Environmentally friendlier...
