IRF9383M Overview
The IRF9383MTRPbF bines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,...
IRF9383M Key Features
- 30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V