Description
The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
Features
- l Environmentaly Friendly Product l RoHs Compliant Containing no Lead,
no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
DirectFET® P-Channel Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Qg tot Qgd Qgs2
Qrr
Qoss Vgs(th)
67nC 29nC 9.4nC 315nC 59nC -1.8V
G D
S
S
D
MX
DirectFET.
IRF9383M Datasheet
