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IRF9383M - Power MOSFET

Download the IRF9383M datasheet PDF. This datasheet also covers the IRF9383MPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Key Features

  • l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) DirectFET® P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V G D S S D MX DirectFET™.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF9383MPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF9388PbF Power MOSFET Infineon
IRF9358 Dual P-Channel HEXFET Power MOSFET Infineon
IRF9358PbF Dual P-Channel HEXFET Power MOSFET Infineon
IRF9130 P-Channel Power MOSFET Samsung semiconductor
IRF9130 P-Channel Power MOSFET Seme LAB

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF9383MPBF Power MOSFET
IRF9388PbF HEXFET Power MOSFET
IRF9388TRPbF HEXFET Power MOSFET
IRF9389PBF HEXFET Power MOSFET
IRF9310 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF9383MPbF Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) DirectFET® P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V G D S S D MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.