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IRF9Z24NPBF - HEXFET Power MOSFET

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• Lead-Free PD - 94982 IRF9Z24NPbF www.irf.com 1 02/05/04 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* + ‚ - + Circuit Layout Considerations • Low Stray Inductance ƒ • Ground Plane • Low Leakage Inductance Current Transformer - - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
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