Datasheet4U Logo Datasheet4U.com

IRF9Z24L - Power MOSFET

Download the IRF9Z24L datasheet PDF. This datasheet also covers the IRF9Z24S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRF9Z24S, SiHF9Z24S).
  • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • P-Channel.
  • Fully Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF9Z24S-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF9Z24L Power MOSFET International Rectifier
IRF9Z24 POWER MOSFET International Rectifier
IRF9Z24N Power MOSFET International Rectifier
IRF9Z24N -55V P-Channel MOSFET UMW
IRF9Z24NL Power MOSFET International Rectifier

Other Datasheets by Vishay

Part Number Description
IRF9Z24 Power MOSFET
IRF9Z24S Power MOSFET
IRF9Z20 Power MOSFET
IRF9Z10 Power MOSFET
IRF9Z14 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single 0.28 S I2PAK (TO-262) D2PAK (TO-263) G G SD D G S D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.