Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN
1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 )
4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 )
3X
1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )
0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M
3X
0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 )
2 . 5 4 ( .1 0 0 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H
2 .9 2.
IRF9Z24N Datasheet
