Download IRF9Z30PBF Datasheet PDF
IRF9Z30PBF page 2
Page 2
IRF9Z30PBF page 3
Page 3

IRF9Z30PBF Description

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence bined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation.