Description
S
TO-220AB
www.DataSheet4U.com
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness.The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation.They retain all of the
Features
- P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free
HEXFET® POWER MOSFET
Product Summary
Part Number IRF9Z30PbF VDS(V) -50
D
RDSON (Ω) 0.14
ID (A) -18
G.
IRF9Z30PBF Datasheet
