IRFB11N50APBF Datasheet | International Rectifier

SMPS MOSFET PD- 94832 IRFB11N50APb F HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free VDSS Rds(on) max ID 500V 0.52Ω 11A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB G D S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 11 7.0 44 170 1.3 ± 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l Two Transistor Forward l Half & Full Bridge l Power Factor Correction Boost Notes  through … are on page 8 .irf. 11/11/03 IRFB11N50APb...