IRFB11N50A Datasheet | Vishay

FEATURES - Low gate charge Qg results in simple drive requirement Available - Improved gate, avalanche, and dynamic d V/dt ruggedness Available - Fully characterized capacitance and avalanche voltage and current - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details APPLICATIONS - Switch mode power supply (SMPS) - Uninterruptible power supply - High speed power switching APPLICABLE OFF LINE SMPS TOPOLOGIES - Two transistor forward - Half and full bridge - Power factor correction boost ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220 IRFB11N50APb F IRFB11N50APb F-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10 s TJ, Tstg Mounting...