IRFB11N50A Description
IRFB11N50A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52.
IRFB11N50A Key Features
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche, and dynamic dV/dt
- Fully characterized capacitance and avalanche voltage and current
- Material categorization: for definitions of pliance please see .vishay./doc?99912
- This datasheet provides information about parts that are