IRFB11N50APBF Description
l Two Transistor Forward l Half & Full Bridge l Power Factor Correction Boost Notes through are on page 8 .irf. 1 11/11/03 IRFB11N50APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage...
IRFB11N50APBF Key Features
- Switch Mode Power Supply ( SMPS )
- Uninterruptable Power Supply
- High speed power switching
- Lead-Free VDSS Rds(on) max ID 500V 0.52Ω 11A Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB G D S