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IRFB11N50 - Power MOSFET

Key Features

  • M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . Part Marking Information TO-220AB E XA M P LE : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L OT C O D E 9 B 1 M A IN T E R N A T IO N A L R E C TIFIE R LOGO A SS E MB LY LOT COD E P A RT NU M B ER IR F 1 0 10 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YE A R W W = W E EK Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ).
  • Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 91809B SMPS MOSFET IRFB11N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.