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IRFB4229PBF - Power MOSFET

Description

applications in Plasma Display Panels.

low on-resistance per silicon area and low EPULSE rating.

Features

  • l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97078A IRFB4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175°C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Class-D Audio Amplifier 300W-500W (Half-bridge) Key Parameters VDS min 250 V VDS (Avalanche) typ. RDS(ON) typ.
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