IRFBA1405PPBF
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- of this MOSFET are a 175oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche
- The result is significantly increased current handling capability over both the TO-220 and the much larger TO-247 package
- This package has been designed to meet automotive, Q101, qualification standard
