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International Rectifier Electronic Components Datasheet

IRFH3707PBF Datasheet

Power MOSFET

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PD - 96227
Applications
l Synchronous Buck Converter for Computer
Processor Power
l Isolated DC to DC Converters for Network and
Telecom
l Buck Converters for Set-Top Boxes
l System/load switch
IRFH3707PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
:30V 12.4m @VGS = 10V 5.4nC
Benefits
l Low RDS(ON)
l Very Low Gate Charge
l Low Junction to PCB Thermal Resistance
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
S
DS
DS
G
D
D
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Max.
30
± 20
12
9.4
29
96
2.8
1.8
0.02
-55 to + 150
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
ghRθJA Junction-to-Ambient
hRθJA Junction-to-Ambient (t<10s)
Typ.
–––
–––
–––
Max.
7.5
45
31
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through † are on page 10
www.irf.com
Units
V
A
W
W/°C
°C
Units
°C/W
1
02/12/09


International Rectifier Electronic Components Datasheet

IRFH3707PBF Datasheet

Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRFH3707PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
eStatic Drain-to-Source On-Resistance ––– 9.4 12.4 mVGS = 10V, ID = 12A
e––– 14.5 17.9
VGS = 4.5V, ID = 9.4A
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35 1.8 2.35 V
––– -6.2 ––– mV/°C VDS = VGS, ID = 25µA
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
17 ––– –––
––– 5.4 8.1
S VDS = 15V, ID = 9.4A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 1.1 –––
VDS = 15V
––– 0.7 ––– nC VGS = 4.5V
––– 2.2 –––
ID = 9.4A
––– 1.5 –––
See Fig.17 & 18
Qsw Switch Charge (Qgs2 + Qgd)
––– 2.9 –––
Qoss Output Charge
––– 3.8 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
––– 2.0 –––
––– 7.8 –––
––– 10.2 –––
––– 8.7 –––
––– 9.7 –––
VDD = 15V, VGS = 4.5V
ns ID = 9.4A
RG=1.8
See Fig.15
Ciss Input Capacitance
––– 755 –––
VGS = 0V
Coss Output Capacitance
––– 171 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 83 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
13
9.4
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 3.5
––– ––– 96
––– ––– 1.0
––– 20 30
––– 27 41
MOSFET symbol
D
A
showing the
integral reverse
G
ep-n junction diode.
S
V TJ = 25°C, IS = 9.4A, VGS = 0V
ns TJ = 25°C, IF = 9.4A, VDD = 15V
nC di/dt = 200A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRFH3707PBF
Description Power MOSFET
Maker International Rectifier
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IRFH3707PBF Datasheet PDF






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