IRFH4213DPbF Datasheet | International Rectifier

Features Low RDSon (<1.35m) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.3°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Lower Switching Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor patibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number IRFH4213DPb F Package Type PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH4213DTRPb F Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation Linear Derating Factor  Operating Junction and Storage Temperature Range Max. ± 20 40 208 131 100 400 3.6 96 0.029 -55 to + 150 W W/°C °C A Units V Notes  through  are on page 8 1 .irf. © 2013 International Rectifier May 20, 2013 IRFH4213DPb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient VGS(th) IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time...