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International Rectifier Electronic Components Datasheet

IRFH4213DPbF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.35
1.90
25
100
V
m
nC
A
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
IRFH4213DPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDSon (<1.35m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.3°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH4213DPbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4213DTRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
Max.
± 20
40
208
131
100
400
3.6
96
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
May 20, 2013


International Rectifier Electronic Components Datasheet

IRFH4213DPbF Datasheet

Power MOSFET

No Preview Available !

IRFH4213DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
340
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
1.10
1.50
1.6
-4.5
–––
–––
–––
–––
55
25
9.4
4.1
9.4
2.1
13.5
27
1.5
14
30
18
12
3520
1070
250
Max.
–––
–––
1.35
1.90
2.1
–––
250
100
-100
–––
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 10mA
mVGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V VDS = VGS, ID = 100µA
mV/°C VDS = VGS, ID = 10mA
µA VDS = 20V, VGS = 0V
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
VDS = 13V
nC VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ns ID = 50A
RG=2.0
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
180
50
Typ.
–––
–––
–––
26
35
Max.
100
400
0.8
37
53
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 13V
di/dt = 260A/µs
Typ.
–––
–––
–––
–––
Max.
1.3
21
35
21
Units
°C/W
2 www.irf.com © 2013 International Rectifier
May 20, 2013


Part Number IRFH4213DPbF
Description Power MOSFET
Maker International Rectifier
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IRFH4213DPbF Datasheet PDF






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International Rectifier





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