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International Rectifier Electronic Components Datasheet

IRFH4226PBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
2.4
3.3
16
70
V
m
nC
A
 
Applications
Control MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
FastIRFET™
IRFH4226PbF
HEXFET® Power MOSFET
 
PQFN 5X6 mm
Features
Low Charge (typical 16 nC)
Low RDSon (<2.4 m)
Low Thermal Resistance to PCB (<2.7 °C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number  
IRFH4226PbF
Package Type  
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4226TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
30
110
69
70
460
3.4
46
0.027
-55 to + 150
 
Units
V
A 
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 11, 2015


International Rectifier Electronic Components Datasheet

IRFH4226PBF Datasheet

Power MOSFET

No Preview Available !

  IRFH4226PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
136
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
21
1.7
2.6
1.6
-5.7
–––
–––
–––
–––
32
16
3.6
2.0
5.8
4.6
7.8
15
1.1
11
35
14
8.1
2000
570
150
 
 
Typ.
–––
–––
–––
16
28
    
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
2.4
3.3
m
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
2.1 V VDS = VGS, ID = 50µA
––– mV/°C
1.0 µA
100
-100
nA
––– S
––– nC
24
–––  
––– nC
–––  
–––  
–––  
––– nC
–––  
–––
––– ns
–––  
–––  
–––
––– pF
–––  
VDS = 20V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 10V, ID = 30A
VGS = 10V, VDS = 13V, ID = 30A
VDS = 13V
VGS = 4.5V
ID = 30A
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 30A
RG=1.8
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
  
Max.
131
30
 
Units.
mJ
A
    
Max. Units
Conditions
70
460
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
1.0 V TJ = 25°C, IS = 30A, VGS = 0V
24 ns TJ = 25°C, IF = 30A, VDD = 13V
42 nC di/dt = 450A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
2.7
27
37
23
 
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 11, 2015


Part Number IRFH4226PBF
Description Power MOSFET
Maker International Rectifier
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