IRFH4226PBF Datasheet | International Rectifier

Features Low Charge (typical 16 n C) Low RDSon (<2.4 m) Low Thermal Resistance to PCB (<2.7 °C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant, Halogen-Free MSL1, Industrial Qualification Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density  Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH4226Pb F Package Type   PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFH4226TRPb F Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 30 110 69 70 460 3.4 46 0.027 -55 to + 150   Units V A  W W/°C °C Notes  through  are on page 9 1 .irf. © 2015 International Rectifier Submit Datasheet Feedback March 11, 2015   IRFH4226Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qg Total Gate...