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International Rectifier Electronic Components Datasheet

IRFH5007PBF Datasheet

HEXFET Power MOSFET

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www.DataPShDee-t94U5.9co5m8
IRFH5007PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
75
5.9
65
1.2
h100
V
m
nC
A
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (5.9m)
Low Thermal Resistance to PCB (0.5°C/W)
100% Rg tested
Low Profile (0.9 mm)
Lower Conduction Losses
Enables Better Thermal Dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5007TRPBF
IRFH5007TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
75
±20
17
13
100
88
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 8
www.irf.com
1
03/12/10


International Rectifier Electronic Components Datasheet

IRFH5007PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5007PbF
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
75
–––
–––
2.0
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.09
5.1
–––
-8.4
–––
–––
–––
–––
–––
65
11
4.5
20
29.5
24.5
21
1.2
10
14
30
11
4290
510
210
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
e––– V/°C Reference to 25°C, ID = 1mA
5.9 mVGS = 10V, ID = 50A
4.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
150µA
20
250
100
-100
–––
98
µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 50A
––– VDS = 38V
–––
–––
nC
VGS = 10V
ID = 50A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 38V, VGS = 10V
–––
–––
ns
ID = 50A
RG=1.8
––– See Fig.15
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
250
50
Units
mJ
A
Parameter
IS Continuous Source Current
h(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 100
––– ––– 400
––– ––– 1.3
––– 31 47
––– 170 255
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 38V
nC di/dt = 500A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
22
Units
°C/W
2 www.irf.com


Part Number IRFH5007PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH5007PBF Datasheet PDF






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