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IRFH5006PbF
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) RG (typical)
ID
(@Tmb = 25°C)
60
4.1
69 1.2
h100
V mΩ nC Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters
Features and Benefits
Features
Low RDSon (≤ 4.1mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.