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International Rectifier Electronic Components Datasheet

IRFH5010PBF Datasheet

HEXFET Power MOSFET

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IRFH5010PBF pdf
IRFH5010PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
9.0
67
1.2
h100
V
mΩ
nC
Ω
A
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Features and Benefits
Features
Low RDSon (< 9 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5010TRPBF
IRFH5010TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9.
Max.
100
± 20
13
11
h100
70
400
3.6
250
0.029
-55 to + 150
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 19, 2015


International Rectifier Electronic Components Datasheet

IRFH5010PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5010PBF pdf
IRFH5010PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.11
7.5
–––
-8.3
–––
–––
–––
–––
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
206 –––
––– 67
––– 12
––– 5.3
––– 18
––– 32
––– 23.3
––– 18
––– 1.2
––– 9
––– 12
––– 27
––– 8.6
––– 4340
––– 425
––– 162
Max. Units
Conditions
––– V VGS = 0V, ID = 250uA
e––– V/°C Reference to 25°C, ID = 1.0mA
9.0 mΩ VGS = 10V, ID = 50A
4.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
150μA
20
250
100
-100
–––
101
μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 50A
––– VDS = 50V
–––
–––
nC
VGS = 10V
ID = 50A
–––
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 50V, VGS = 10V
–––
–––
ns
ID = 50A
RG=1.3Ω
–––
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
227
50
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h––– ––– 100
MOSFET symbol
D
––– ––– 400
A
showing the
integral reverse
G
S
p-n junction diode.
––– ––– 1.3
eV TJ = 25°C, IS = 50A, VGS = 0V
––– 34 51 ns TJ = 25°C, IF = 50A, VDD = 50V
––– 256 384 nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
22
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015


Part Number IRFH5010PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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IRFH5010PBF pdf
IRFH5010PBF Datasheet PDF
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