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IRFH5025PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
250 100 37 1.6 25
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits
Features Benefits
Low RDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.