IRFH5053TR2PBF Overview
1.6 40 Units °C/W Junction-to-Ambient g Notes through are on page 9 .irf. 12/16/08 1 IRFH5053PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate...
IRFH5053TR2PBF Key Features
- l HEXFET® Power MOSFET 3 Phase Boost Converter Applications Secondary Side Synchronous Rectification VDSS 1
- l Very low RDS(ON) at 10V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested f