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International Rectifier Electronic Components Datasheet

IRFH5053TR2PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

Applications
l 3 Phase Boost Converter Applications
l Secondary Side Synchronous Rectification
PD - 97359
IRFH5053PbF
VDSS
100V
HEXFET® Power MOSFET
RDS(on) max
Qg
18m@VGS = 10V 24nC
Benefits
l Very low RDS(ON) at 10V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
D
D
D
D
PQFN
S
S
S
G
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
gRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Max.
100
± 20
9.3
7.4
46
75
3.1
2.0
0.025
-55 to + 150
Typ.
–––
–––
Max.
1.6
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/16/08


International Rectifier Electronic Components Datasheet

IRFH5053TR2PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5053PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
3.0
–––
–––
–––
–––
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
14.4
3.7
-11
–––
–––
–––
–––
–––
24
5.2
1.5
8.6
8.7
10.1
12
0.8
12
7.5
18
4.1
1510
230
59
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
e18 mVGS = 10V, ID = 9.3A
4.9
–––
V
mV/°C
VDS
=
VGS,
ID
=
100µA
20
250
100
-100
–––
36
µA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 50V, ID = 7.4A
––– VDS = 50V
–––
–––
nC
VGS = 10V
ID = 7.4A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 50V, VGS = 10V
–––
–––
ns
ID = 7.4A
RG=1.8
––– See Fig.15
––– VGS = 0V
––– pF VDS = 50V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
21
7.4
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 2.8
––– ––– 75
––– ––– 1.3
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 7.4A, VGS = 0V
––– 31 47 ns TJ = 25°C, IF = 7.4A, VDD = 50V
––– 210 320 nC di/dt = 800A/µs See Fig.16
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRFH5053TR2PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH5053TR2PBF Datasheet PDF






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International Rectifier





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