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International Rectifier Electronic Components Datasheet

IRFH5106PBF Datasheet

HEXFET Power MOSFET

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IRFH5106PBF pdf
www.DataPShDee-t94U5.9co5m9
IRFH5106PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
60 V
5.6 m
50 nC
1.4
100 A
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (5.6m)
Low Thermal Resistance to PCB (0.5°C/W)
100% Rg tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5106TRPBF
IRFH5106TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
www.irf.com
Max.
60
±20
21
17
100
63
400
3.6
114
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
03/12/10


International Rectifier Electronic Components Datasheet

IRFH5106PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5106PBF pdf
IRFH5106PbF
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.05
4.65
–––
-8.5
–––
–––
–––
–––
–––
50
8.2
3.9
17
20.9
20.9
17
1.4
8.1
13
23
9.5
3090
460
205
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
e––– V/°C Reference to 25°C, ID = 1mA
5.6 mVGS = 10V, ID = 50A
4.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
250µA
20
250
100
-100
–––
75
µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 50A
––– VDS = 30V
–––
–––
nC
VGS = 10V
ID = 50A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 60V, VGS = 10V
–––
–––
ns
ID = 50A
RG=1.65
––– See Fig.15
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
96
50
Units
mJ
A
Parameter
IS Continuous Source Current
h(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 100
––– ––– 400
––– ––– 1.3
––– 28 42
––– 130 195
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 30V
nC di/dt = 500A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.1
15
35
22
Units
°C/W
2 www.irf.com


Part Number IRFH5106PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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IRFH5106PBF pdf
IRFH5106PBF Datasheet PDF
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